Japan Intellectual Property Rights: MANUFACTURING METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE, AND SILICON CARBIDE SEMICONDUCTOR DEVICE

Japan, Jan. 16 -- FUJI ELECTRIC CO LTD has got intellectual property rights for 'MANUFACTURING METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE, AND SILICON CARBIDE SEMICONDUCTOR DEVICE.' Other related details are as follows:

Application Number: JP,2021-191203

Category (FI): H01L29/48@D,H01L29/48@F,H01L29/78,652@M,H01L29/78,652@T,H01L29/86,301@D,H01L29/86,301@E,H01L29/86,301@F,H01L29/86,301@P,H01L29/91@C,H01L29/91@F,H01L29/91@K,H10D30/66,101@T,H10D30/66,102@D,H10D30/66,102@S,H10D64/62@S,H10D64/62@Z,H10D64/64,H10D64/64@B,H10D64/64@R,H10D8/01@S,H10D8/50@C,H10D8/50@F,H10D8/50@K,H10D8/60@D,H10D8/60@E,H10D8/60@F

Stage: Grant (IP right granted following substantive examination.)

Filing Date: Nov. 25, 2021

Publication Date: June 6, 2023

The original document can be viewed at: https://www.j-platpat.inpit.go.jp/p0100

Disclaimer: Curated by HT Syndication.