Japan Intellectual Property Rights: METHOD FOR DRY ETCHING SINGLE CRYSTAL SILICON WAFER, METHOD FOR PRODUCING SINGLE CRYSTAL SILICON WAFER, AND SINGLE CRYSTAL SILICON WAFER

Japan, Jan. 16 -- SHIN ETSU HANDOTAI CO LTD has got intellectual property rights for 'METHOD FOR DRY ETCHING SINGLE CRYSTAL SILICON WAFER, METHOD FOR PRODUCING SINGLE CRYSTAL SILICON WAFER, AND SINGLE CRYSTAL SILICON WAFER.' Other related details are as follows:

Application Number: JP,2022-090955

Category (FI): H01L21/302,105@B,H01L21/304,601@Z,H10P50/20,105@B,H10P50/28,H10P95/60@Z

Stage: Grant (IP right granted following substantive examination.)

Filing Date: June 3, 2022

Publication Date: Dec. 14, 2023

The original document can be viewed at: https://www.j-platpat.inpit.go.jp/p0100

Disclaimer: Curated by HT Syndication.