Japan, July 14 -- NATIONAL CHUNG-SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY has got intellectual property rights for 'METHOD FOR PRODUCING ALUMINUM NITRIDE SUBSTRATE.' Other related details are as follows:
Application Number: JP,2024-137020
Category (FI): C30B29/38@C,C30B33/00,C23C14/06@A
Stage: PROBLEM TO BE SOLVED: To provide a method for producing an aluminum nitride substrate having a small surface pore diameter and high thermal conductivity.SOLUTION: A method for manufacturing a polycrystalline aluminum nitride substrate includes: a step (A) of providing a polycrystalline aluminum nitride substrate whose surface is to be polished, causing a plasma formed of nitrogen and argon to act on a first layer aluminum nitride film generated by reaction on the surface of the substrate by a magnetron sputtering apparatus, and filling a gap of a hole generated due to a defect of a crystal lattice on the surface of the substrate; a step (B) of removing the first layer aluminum nitride film on the substrate by a flattening method to leave a filling portion in the hole; a step (C) of sintering the substrate, the surface of which has been flattened, at a high temperature to enhance the adhesion density between the aluminum nitride film in the gap and the substrate; a step (D) of subjecting the substrate, the sintering of which has been completed, to hole-filling sputtering of a second layer aluminum nitride film at a slow sputtering rate; and a step (C) of removing the second layer aluminum nitride film on the substrate by a flattening method to form a second layer aluminum nitride film on the substrate. (E) leaving the filling portion in the hole to complete the manufacture of the substrate.SELECTED DRAWING: Figure 1 (Grant)
Filing Date: Aug. 16, 2024
Publication Date: Feb. 27
The original document can be viewed at: https://www.j-platpat.inpit.go.jp/p0100
Disclaimer: Curated by HT Syndication.
