Japan Intellectual Property Rights: NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE

Japan, Oct. 5 -- FUJI ELECTRIC CO LTD,NATIONAL INSTITUTE FOR MATERIALS SCIENCE has got intellectual property rights for 'NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE.' Other related details are as follows:

Application Number: JP,2023-013421

Category (FI): H01L29/78,652@C,H01L29/78,652@D,H01L29/78,652@J,H01L29/78,652@T,H01L29/78,653@A,H01L29/78,655@A,H01L29/78,658@A,H01L29/91@C,H01L29/91@F,H10D12/00,101@A,H10D30/01,301@A,H10D30/66,101@C,H10D30/66,101@D,H10D30/66,101@H,H10D30/66,101@J,H10D30/66,101@K,H10D30/66,101@L,H10D30/66,101@M,H10D30/66,101@T,H10D30/66,201@A,H10D8/50@C,H10D8/50@F

Stage: Grant (IP right granted following substantive examination.)

Filing Date: Jan. 31, 2023

Publication Date: Aug. 13, 2024

The original document can be viewed at: https://www.j-platpat.inpit.go.jp/p0100

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