Japan, Feb. 27 -- TOSHIBA ELECTRONIC DEVICES & STORAGE CORP,TOSHIBA CORP has got intellectual property rights for 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF.' Other related details are as follows:

Application Number: JP,2022-150316

Category (FI): H01L29/78,658@E,H01L29/78,652@B,H01L29/78,653@A,H01L29/78,652@M,H01L29/78,658@F,H01L29/78,658@G,H10D30/01,301@E,H10D30/01,301@F,H10D30/01,301@G,H10D30/66,101@B,H10D30/66,102@D,H10D30/66,102@F,H10D30/66,201@A,H10D30/66,102@S

Stage: PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing a contact resistance with a metal electrode.SOLUTION: A semiconductor device includes: a semiconductor part including a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type in contact with the first semiconductor layer: a first electrode electrically connected to the first semiconductor layer on a front surface side or a back surface side of the semiconductor part; a second electrode electrically connected to the second semiconductor layer on the front surface side of the semiconductor part; a gate electrode facing the second semiconductor layer, in the semiconductor part or on the front surface side of the semiconductor part; an interlayer insulating film electrically insulating the gate electrode and the second electrode from each other on the front surface side of the semiconductor part; and a third semiconductor layer of the first conductivity type including a first region in contact with the second semiconductor layer and the second electrode on the front surface side of the semiconductor part, and a second region provided between the interlayer insulating film and the second electrode in a second direction perpendicular to a first direction that is toward the second electrode from the first semiconductor layer.SELECTED DRAWING: Figure 1 (Grant)

Filing Date: Sept. 21, 2022

Publication Date: April 2, 2024

The original document can be viewed at: https://www.j-platpat.inpit.go.jp/p0100

Disclaimer: Curated by HT Syndication.