Japan, July 14 -- MITSUBISHI ELECTRIC CORP has got intellectual property rights for 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE.' Other related details are as follows:
Application Number: JP,2023-051198
Category (FI): H01L29/78,652@T,H01L29/78,652@Q,H01L29/78,655@A,H10D30/66,101@T,H10D30/66,103@Q,H10D12/00,101@A,H10W90/00,700,H10W90/00,800,H10D84/80,202@A,H01L29/78,656@A,H01L25/04@C,H03K17/567,H03K17/687@F,H03K17/12,H03K17/08@D,H03K17/04@J
Stage: PROBLEM TO BE SOLVED: To provide a semiconductor device capable of sufficiently utilizing MOSFET characteristics, and a method for manufacturing the semiconductor device.SOLUTION: A semiconductor device comprises: a lower arm side MOSFET 19; a lower arm side IGBT 18; an upper arm side MOSFET 6; an upper arm side IGBT 8; an upper arm side control IC 3 controlling the driving of the upper arm side MOSFET 6 and the upper arm side IGBT 8; a MOSFET gate wire 4 connecting a gate electrode of the upper arm side MOSFET 6 and the upper arm side control IC 3; an IGBT gate wire 5 connecting a gate electrode of the upper arm side IGBT 8 and the upper arm side control IC 3; and an IGBT emitter sense wire 7 directly connecting an emitter electrode of the upper arm side IGBT 8 and the upper arm side control IC 3. A source electrode of the upper arm side MOSFET 6 is electrically connected to the upper arm side control IC 3 via the emitter electrode of the upper arm side IGBT 8.SELECTED DRAWING: Figure 1 (Grant)
Filing Date: March 28, 2023
Publication Date: Oct. 10, 2024
The original document can be viewed at: https://www.j-platpat.inpit.go.jp/p0100
Disclaimer: Curated by HT Syndication.
