Japan, July 14 -- TOSHIBA CORP,TOSHIBA ELECTRONIC DEVICES & STORAGE CORP has got intellectual property rights for 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE.' Other related details are as follows:
Application Number: JP,2023-049093
Category (FI): H01L29/78,652@N,H01L29/78,658@G,H01L29/78,652@J,H10D30/66,103@B,H01L29/78,652@T,H01L29/06,301@V,H01L29/06,301@M,H01L29/78,653@C,H01L29/78,658@J,H01L29/78,658@E,H01L29/78,655@F,H01L21/78@L,H10D62/10,101@M,H10D62/10,101@V,H10P58/00@L,H10D30/66,101@H,H10D30/66,101@T,H10D12/00,103@S,H10D30/01,301@G,H10D30/01,301@E,H10D30/01,301@J,H10D30/66,201@C
Stage: PROBLEM TO BE SOLVED: To provide a semiconductor device with improved reliability.SOLUTION: A semiconductor device according to an embodiment includes a device region and a dicing region surrounding the device region. The device region includes a first electrode, a second electrode, and a silicon carbide layer having a first face on a side of the first electrode and a second face on a side of the second electrode. At least a portion of the silicon carbide layer is provided between the first electrode and the second electrode. The dicing region includes the silicon carbide layer having the first face and the second face. A first maximum distance from the second face to the first face of the device region in a normal direction of the second face is greater than a second maximum distance from the second face to the first face of the dicing region in the normal direction.SELECTED DRAWING: Figure 1 (Grant)
Filing Date: March 24, 2023
Publication Date: Oct. 7, 2024
The original document can be viewed at: https://www.j-platpat.inpit.go.jp/p0100
Disclaimer: Curated by HT Syndication.
