Japan, March 5 -- SEMICONDUCTOR ENERGY LAB CO LTD has got intellectual property rights for 'SEMICONDUCTOR DEVICE.' Other related details are as follows:
Application Number: JP,2025-138876
Category (FI): H10B12/00,801,H10D30/68,H10D84/83@E,H10D84/83@H,H10D84/85@G,H10D84/85@H,H10D86/40,101@B,H10B12/00,671@Z,H10B41/70,H10D30/67,103@B,H10D84/80,101@A
Stage: PROBLEM TO BE SOLVED: To provide a semiconductor device having a novel structure.SOLUTION: A semiconductor device includes a first wiring, a second wiring, a third wiring, a fourth wiring, a first transistor 160 including a first gate electrode, a first source electrode, and a first drain electrode, and a second transistor 162 including a second gate electrode, a second source electrode, and a second drain electrode. The first transistor is provided over a substrate including a semiconductor material and the second transistor includes an oxide semiconductor layer. The first gate electrode is electrically connected to one of the second source electrode and the second drain electrode. The first wiring is electrically connected to the first source electrode. The second wiring is electrically connected to the first drain electrode. The third wiring is electrically connected to the other of the second source electrode and the second drain electrode. The fourth wiring is electrically connected to the second gate electrode.SELECTED DRAWING: Figure 1 (Grant)
Filing Date: Aug. 22, 2025
Publication Date: Nov. 5, 2025
The original document can be viewed at: https://www.j-platpat.inpit.go.jp/p0100
Disclaimer: Curated by HT Syndication.
