Japan Intellectual Property Rights: SILICON CARBIDE SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR CIRCUIT DEVICE

Japan, Nov. 7 -- FUJI ELECTRIC CO LTD has got intellectual property rights for 'SILICON CARBIDE SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR CIRCUIT DEVICE.' Other related details are as follows:

Application Number: JP,2021-136763

Category (FI): H01L29/78,653@A,H01L21/02@A,H01L21/66@L,H01L27/088@B,H01L29/06,301@D,H01L29/06,301@V,H01L29/78,652@G,H01L29/78,652@H,H01L29/78,652@J,H01L29/78,652@Q,H01L29/78,652@T,H01L29/78,658@E,H01L29/78,658@L,H10D30/01,301@E,H10D30/01,301@L,H10D30/66,101@G,H10D30/66,101@H,H10D30/66,101@T,H10D30/66,103@Q,H10D30/66,201@A,H10D62/10,101@D,H10D62/10,101@V,H10D84/83@B

Stage: Grant (IP right document published.)

Filing Date: Aug. 25, 2021

Publication Date: March 9, 2023

The original document can be viewed at: https://www.j-platpat.inpit.go.jp/p0100

Disclaimer: Curated by HT Syndication.