Japan, Feb. 27 -- TOKYO ELECTRON LTD has got intellectual property rights for 'SUBSTRATE PROCESSING DEVICE, SUBSTRATE PROCESSING METHOD, AND GAS SUPPLY ASSEMBLY.' Other related details are as follows:
Application Number: JP,2022-110715
Category (FI): H10P14/24,H10P14/60,101@C,H10P50/20,101@C,H01L21/302,101@C,H01L21/205,H01L21/31@C,H05H1/46@L
Stage: PROBLEM TO BE SOLVED: To improve controllability with respect to the uniformity of plasma processing.SOLUTION: A substrate processing device comprises: a processing container in which a processing space is formed between a mounting table and a metal window; and an inductive coupling antenna for generating plasma inside the processing space. The metal window includes a plurality of divided windows and insulation parts disposed between the mutually adjacent divided windows. Each of the divided windows has a first gas shower structure including a gas hole for supplying a process gas to the processing space. Each insulation part has a second gas shower structure including a gas hole for supplying the process gas to the processing space. A second gas passage for introducing the process gas to the second gas shower structure is independent of a first gas passage for introducing the process gas to the first gas shower structure, in a portion at an upstream of a portion where the first gas passage is connected to the first gas shower structure.SELECTED DRAWING: Figure 3 (Grant)
Filing Date: July 8, 2022
Publication Date: Jan. 19, 2024
The original document can be viewed at: https://www.j-platpat.inpit.go.jp/p0100
Disclaimer: Curated by HT Syndication.
